国内外碳化硅标准比对分析

摘要：

为了探明碳化硅国内外标准的情况和差异，本文调研、分析并选择了中国国家标准和行业标准、国际标准及美国、欧洲、日本、俄罗斯、罗马尼亚相关标准，选择碳化硅物理特性、碳化硅磨料化学分析方法、含碳化硅耐火材料化学分析方法、碳化硅晶片产品规格进行标准比对。通过比对，得出结论：（1）国外有关碳化硅标准，都制定了碳化硅产品的理化性能标准，有些指标我国国家标准和部分企业实际质量控制中未列入检测控制指标，如：振实密度、比表面积、清洁度、韧性、电导率；（2）针对碳化硅粒度砂与微粉产品，发达国家根据其用途不同，按照对口专用、精密化、综合利用原则，分成了多种牌号专用产品，专用产品的企业标准指标要求也不同，使生产者和使用者找到了最佳结合点，产品产生了最大效益；（3）从碳化硅磨料的化学分析方法标准比对和含碳化硅耐火材料化学分析方法标准比对结果看，我国国家标准的比对指标相较于美国、欧盟及日本等发达国家及地区而言较为完整；（4）从碳化硅晶片产品相关标准比对结果看，我国国家标准对碳化硅单晶抛光片以及晶片检测方面制定了相关标准，而美国、欧盟、日本等发达国家及地区没有涉及。针对碳化硅外延片表面缺陷的测试环境，我国国家标准相较于欧盟以及日本标准要求更高。

Abstract:

In order to explore the situation and differences between domestic and foreign standards for silicon carbide, this paper investigates, analyzes, and selects Chinese national and sectoral standards, international standards, relevant standards from the United States, Europe, Japan, Russia, and Romania. The physical properties of SiC, chemical analysis methods for SiC abrasives, chemical analysis methods for refractory materials containing SiC, and product specifications for SiC wafers are selected for standards comparison. Through comparison, it can be concluded that: (1) There are foreign standards for the physical and chemical properties of silicon carbide products. Some indicators, such as vibration density, specific surface area, cleanliness, toughness, and conductivity, are not included in the national standards and actual quality control of some enterprises in China; (2) Developed countries have divided silicon carbide sand and micro powder products into multiple brand specific products based on their different uses and the principles of matching, specialized, precision, and comprehensive utilization. The enterprise standard index requirements for specific products are also different, which provides producers and users with the best combination point and maximizes the benefits of the products; (3) From the comparison results of chemical analysis methods for silicon carbide abrasives and refractory materials containing silicon carbide, it can be seen that the comparison indicators of China’s national standards are relatively complete compared to the ones of developed countries such as the United States, the European Union, and Japan; (4) From the comparison results of relevant standards for silicon carbide wafer products, it can be seen that China have developed relevant national standards for silicon carbide single crystal polishing wafers and wafer testing, while the standards of developed countries such as the United States, the European Union, and Japan do not include them. In terms of the testing environment for surface defects of silicon carbide epitaxial wafers, China’s national standards have higher requirements compared to European Union and Japanese standards.

基金项目：本文受外交部亚洲合作资金项目“亚太经合组织标准数字化互联互通平台研究”（项目编号：25A0002-2023）资助。 

作者简介：李景，研究馆员，博士，主要从事标准文献工作和标准化研究。黄佳，通信作者，博士，中国计量大学经济与管理学院副教授，研究方向为质量管理与标准化工程。李国鹏，创新副研究员，硕士，从事知识图谱构建和大数据研究工作。孙红军，博士，副研究员，研究方向为标准对比、标准数字化、标准走出去。